DG4N65S TO-220F TO-251 TO-252 4A 655 0V
DG4N65S is an N-channel enhancement mode MOSFET, The self-aligned planar process and improved terminal technology reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for higher efficiency and system miniaturization
DG4N65S is an N-channel enhancement mode MOSFET, The self-aligned planar process and improved terminal technology reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for higher efficiency and system miniaturization
DG4N65S is an N-channel enhancement mode MOSFET, The self-aligned planar process and improved terminal
technology reduce the conduction loss, improve switching performance and enhance the avalanche energy. The
transistor can be used in various power switching circuit for higher efficiency and system miniaturization
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