DG120N10 is an N-channel enhancement mode MOSFET, The self-aligned planar process and improved terminal technology reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for higher efficiency and system miniaturization
DG120N10 is an N-channel enhancement mode MOSFET, The self-aligned planar process and improved terminal technology reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for higher efficiency and system miniaturization
DG120N10 is an N-channel enhancement mode MOSFET, The self-aligned planar process and
improved terminal technology reduce the conduction loss, improve switching performance and
enhance the avalanche energy. The transistor can be used in various power switching circuit for
higher efficiency and system miniaturization